surface concentration

英 [ˈsɜːfɪs ˌkɒnsnˈtreɪʃn] 美 [ˈsɜːrfɪs ˌkɑːnsnˈtreɪʃn]

网络  表面浓度

计算机化学



双语例句

  1. The methods as how to control the surface carbon concentration, carbon profiles and the morphology of carbides have been put forward.
    提出了控制表面碳浓度,碳浓度分布和碳化物形态的方法和途径。
  2. Analysis and prediction of surface ozone concentration and related meteorological factors in summer in Tianjin
    天津臭氧浓度与气象因素的相关性及其预测方法
  3. A non-driving-force approximation is presented for the description of dynamic response of a spherical porous particle subject to a step change in the surface concentration.
    本研究推导用于描述因颗粒表面浓度阶梯式改变所导致动态行为之非驱动力近似式。
  4. Effects of increasing surface ozone concentration on spikelet formation of hybrid rice cultivars
    近地层臭氧浓度升高对杂交稻颖花形成的影响
  5. Predicting saturation surface concentration of surfactant at gas/ liquid interface by molecular dynamics
    气/液界面表面活性剂饱和吸附浓度的分子动力学预测
  6. Effect of pitting corrosion on surface stress concentration factor of aluminium alloy
    铝合金点蚀对应力集中系数影响的分析
  7. The isotherms illustrated by surface concentration cs in substitution for adsorption amount ns in the conventional method can more objectively reflect the thermodynamic principle that the lower the temperature is, the easier the adsorption carries out.
    利用计量的表面浓度cs代替常规法测定的吸附量ns所得到的吸附等温线,更客观地反映温度降低利于吸附(cs更大)的热力学原理。
  8. The sensitive coefficient correlation with surface dopant concentration and resistance temperature coefficient correlation with surface dopant concentration has been discussed in light of experience data, respectively.
    并依据实验数据论述了灵敏系数和扩散表面杂质浓度的关系以及电阻温度系数与表面杂质浓度的关系。
  9. Determination of the surface concentration of diffused layers in germanium
    锗中扩散层表面浓度的测量
  10. For the devices made from sintered Al electride the semiconducter surface concentration in the contact region between Al and Si is approximately 10~ ( 18) r/ cm~ 2 which has no distinct relationship with the original surface concentration.
    采用烧结铝电极工艺形成的器件,铝硅接触处半导体表面浓度约为10~(18)个/cm~3,与原始表面浓度无明显关系;
  11. The surface concentration of the gold in the silicon is measured to be 4 × 10~ ( 21) cm (-3).
    硅中金的表面浓度达到4×10~(11)cm~(-3)。
  12. The main improvement in open-circuit voltage and the EQE come from the emitter surface passivation and the lower surface concentration.
    开路电压和短波光谱响应的提高主要来自于前表面的钝化和适当地降低了表面浓度。
  13. The interaction potential of hydrogen MWCNTs and the isosteric heat of hydrogen adsorption in low limit surface concentration were calculated by using gas surface virial coefficients and Henry law.
    引入维里吸附方程,并由第二维里吸附系数和亨利定律确定了吸附氢分子在多壁碳纳米管上受到的壁面吸附势和极限吸附热。
  14. Method and experiment for measuring sea surface chlorophyll concentration using lidar
    海洋表层叶绿素浓度的激光雷达测量方法和海上实验
  15. B. To produce the "effect" by changing the structure of electric double layer and influence the surface concentration of reaction particle and activation energy of interface reaction, thus affecting the speed of electrode reaction;
    b.通过改变双电层结构产生φ1效应,影响反应粒子的表面浓度及界面反应的活化能,从而影响电极反&西安理工大学硕士学位论文应速度;
  16. It was found that the adhesion force between the spheres and the chip surface was affected by the ligand surface concentration.
    实验观察到微球与基片表面的结合力受到配基面密度的影响,说明发生结合的是多对而非单对蛋白质分子。
  17. The optimal control principle for the diffusing process under the boundary of the first kind ( surface concentration control) and its applications in the optimal metal carburization are studied.
    本文利用分布参数系统最优控制理论与扩散过程的数学模型,研究第一类边界控制(表面浓度控制)条件下的扩散过程最优控制原理及其在金属渗碳最佳工艺研究中的应用。
  18. Experimental study on effect of controlled drainage from ground surface on concentration and discharge of nitrogen
    地表控制排水对氮质量浓度和排放量影响的试验研究
  19. , Curves giving R as function of surface concentration N, have been calculated for two forms of diffusive distribution, namely: the complementary error function and the Gaussian distribution.
    计算了余误差函数分布和高斯分布扩散层的霍尔系数与扩散层表面浓度NS的关系曲线。
  20. The cyclotron resonance and spin resonance between the Landau levels and spin levels of the subband are, measured for different photon energies and different surface electron concentration of the sample.
    测量了不同光子能量和样品在不同表面电子浓度时子能带朗道能级间和自旋能级间的回旋共振和自旋共振。
  21. Statistical fluctuation of instant surface concentration was controlled in the range of 20%~ 30% to ground axial concentration of the average plume.
    模式瞬时浓度的涨落相对于平均轴线浓度大体控制在20%~30%的范围内。
  22. This paper analyzed the relation between surface concentration of SO_2 in Chongqing downtown and these weather conditions such as wind direction, wind velocity, temperature inversion, fog and flow patterns near surface.
    本文分析了重庆市城市SO2地面浓度与风向、风速、逆温、雾以及各种地面流场型式的关系,为研究城市大气污染分布和变化规律提供了科学依据。
  23. Using As, instead of P, as source doping, the surface concentration in the source region is effectively increased when shallow junction structure is employed.
    用砷(As)掺杂代替磷(P)掺杂,有效地提高了源区表面浓度,实现了浅结工艺。
  24. Acid concentration distribute form of acid fracturing in sandstone is as same as that in carbonate, just boundary condition is different, and surface concentration and diffusion coefficient in the equation are comparatively difficult to confirmed.
    砂岩酸压酸沿裂缝的浓度分布与碳酸盐岩酸压形式一样,只是边界条件不同,而且方程中表面浓度与扩散系数确定相对较为困难。
  25. The surface concentration of the adsorbed surfactants, the surface velocity and the migration velocity of the bubble are obtained by a boundary collocation technique.
    采用边界配置点法数值求解了气泡表面吸附的活性剂浓度、气泡表面流体速度以及气泡在溶液中的运动速度。
  26. The initial surface concentration is the key factor of influence on the diffusion coefficients of Peregal O-20.
    结果表明,初始表面浓度c0是影响D0的重要因素。
  27. Furthermore, surface excess concentration of soybean protein at gas liquid interface was measured by fluid method.
    用流动法测定了大豆蛋白质在气液界面上的表面过剩浓度并回归了线性吸附方程。
  28. The time-dependent rules of chloride diffusion coefficient and surface chloride concentration are studied.
    研究了混凝土的氯离子扩散系数随表面氯离子浓度随时间的变化规律。
  29. On the process of semiconductor manufactory, diffusion is the way which penetrate into the silicon substrate using a constant surface concentration of the impurity diffusion at the high temperature, and then re-distribution by the second Limited source surface diffusion for the purpose to doping.
    在半导体平面制造工艺上,扩散主要通过在高温环境下,利用一次恒定表面浓度扩散使杂质源渗透入硅片衬底,再通过二次有限源表面再扩散、再分布,达到掺杂的目的。